unisonic technologies co., ltd 11N50K-MT preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2015 unisonic technologies co., ltd qw-r502-b25.c 11a, 500v n-channel power mosfet ? description the utc 11N50K-MT is an n-channel enhancement mode power mosfet. it uses utc adv anced planar stripe, dmos technology to provide customers perfect switching performance, minimal on-state resistance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 11N50K-MT is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. ? features * r ds(on) < 0.55 ? @ v gs = 10 v, i d = 5.5 a * fast switching * with 100% avalanche tested ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 11n50kl-tf2-t 11n50kg-tf2-t to-220f2 g d s tube note: pin assignment: g: gate d: drain s: source ? marking
11N50K-MT preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-b25.c ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain to source voltage v dss 500 v gate to source voltage v gss 30 v t c =25c 11 (note 2) a continuous drain current t c =100c i d 7 (note 2) a pulsed drain current (note 3) i dm 44 (note 2) a single pulsed avalanche energy(note 4) e as 500 mj peak diode recovery dv/dt (note 5) dv/dt 4.5 v/ns power dissipation 48 w derate above 25c p d 0.38 w/c junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. drain current limited by maximum junction temperature 3. repetitive rating : pulse width limit ed by maximum junction temperature 4. l=8.26mh, i as =11a, v dd = 50v, r g =25 ? , starting t j =25c 5. i sd 11a, di/dt 200a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol rating unit junction to ambient ja 62.5 c/w junction to case jc 2.6 c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 500 v breakdown voltage temperature coefficient ? bv dss / ? t j i d =250 a,referenced to 25c 0.5 v/c v ds =500v, v gs =0v 10 a drain-source leakage current i dss v ds =500v, t j =125c 100 a gate-source leakage current i gss v ds =0v ,v gs =30v 100 na on characteristics gate threshold voltage v gs(th) v ds = v gs , i d =250a 2.0 4.0 v drain-source on-state resistance r ds(on) v gs =10v, i d =5.5a 0.43 0.55 ? dynamic parameters input capacitance c iss 850 1500 pf output capacitance c oss 150 200 pf reverse transfer capacitance c rss v ds =25v,v gs =0v,f=1.0mhz 9 20 pf switching parameters total gate charge q g 33 45 nc gate-source charge q gs 9 nc gate-drain charge q gd v ds =50v, v gs =10v, i d =1.3a (note 1, 2) 9 nc turn-on delay time t d(on) 65 80 ns turn-on rise time t r 100 150 ns turn-off delay time t d(off) 160 250 ns turn-off fall time t f v dd =30v, i d =0.5a, r g =25 ? (note 1, 2) 100 160 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 11 a maximum body-diode pulsed current i sm 44 a drain-source diode forward voltage v sd i s =11a, v gs =0v 1.4 v notes: 1. pulse test : pulse width 300 s, duty cycle 2%. 2. essentially independent of operating temperature.
11N50K-MT preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-b25.c ? test circuits and waveforms peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
11N50K-MT preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-b25.c ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
11N50K-MT preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-b25.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
